集成电路与嵌入式系统2026，Vol.26Issue(3)：20-33,14.DOI:10.20193/j.ices2097-4191.2025.0097
宇航环境下基于RHBD的SRAM抗双节点翻转研究综述
A review of RHBD-based SRAM design against double node upsets in space environment
摘要
Abstract
In high-reliability applications such as aerospace,satellite communication,and nuclear control systems,multiple node upsets(MNUs)induced by radiation have become a major threat to the stability of static random access memory(SRAM).In recent years,to address the double node upset(DNU)issue,various radiation-hardened-by-design(RHBD)structures have been proposed and exten-sively studied,including S8P8N,QUCCE12T,SARP12T,HRLP16T,RH20T,S6P8N,and RH14T.This paper provides a compre-hensive review of RHBD-based SRAM designs with a focus on their fault-tolerance mechanisms against DNU events.The key design principles,performance metrics,and trade-offs among reliability,power consumption,area,access time,and static stability are sum-marized and compared.Finally,the paper points out that existing RHBD structures still face challenges in achieving fine-grained fault tolerance and balanced overall performance.Future development may focus on charge propagation suppression and feedback mechanism optimization to further enhance DNU resilience.关键词
SRAM/RHBD/双节点翻转/加固结构/S8P8N/QUCCE12T/SARP12T/HRLP16T/RH20T/S6P8N/RH14TKey words
SRAM/RHBD/double node upset/hardened structure/S8P8N/QUCCE12T/SARP12T/HRLP16T/RH20T/S6P8N/RH14T分类
信息技术与安全科学引用本文复制引用
帅威,蔡烁,陈俊伊,陈俊哲,梁鑫杰,黄珠,魏懋萱..宇航环境下基于RHBD的SRAM抗双节点翻转研究综述[J].集成电路与嵌入式系统,2026,26(3):20-33,14.基金项目
国家自然科学基金面上项目(62172058) （62172058）
