集成电路与嵌入式系统2026，Vol.26Issue(3)：42-47,6.DOI:10.20193/j.ices2097-4191.2025.0113
基于LLM模型的AI误差分析MOSFET测试系统
MOSFET test system for AI error analysis based on LLM
罗西辉 1何远萧 1陆韵炜 1董亮 1刘成1
作者信息
- 1. 上海大学 微电子学院,上海 200444
- 折叠
摘要
Abstract
To address the challenges of traditional MOSFET testing,such as cumbersome procedures,reliance on bulky instruments,and a low degree of intelligence,this paper presents an automated test system integrating a Large Language Model(LLM)with the"Yuzhu S"portable hardware.Centered around the"Yuzhu S"instrument,the system performs characteristic curve,threshold voltage and conduction resistance tests using an integrated PCB carrier board.It innovatively leverages the Gemini API to empower the soft-ware,enabling automatic parsing of PDF datasheets,intelligent recommendation of test parameters,and in-depth error analysis of the results.The test results for an IRF7401 device demonstrate that the key static and dynamic parameters obtained by the system show ex-cellent agreement with datasheet specifications and simulation values,thus validating the accuracy and feasibility of the proposed solu-tion.This research provides an efficient,intelligent,and portable new method for end-users to evaluate device performance.关键词
MOSFET/误差分析/大语言模型/半导体器件/自动测试技术Key words
MOSFET/error analysis/Large Language Model(LLM)/semiconductor devices/automated test technology分类
信息技术与安全科学引用本文复制引用
罗西辉,何远萧,陆韵炜,董亮,刘成..基于LLM模型的AI误差分析MOSFET测试系统[J].集成电路与嵌入式系统,2026,26(3):42-47,6.
