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High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices

Gaokuo Zhong Jiangyu Li Jiaqi Yan Mingkai Tang Haoyue Deng Yangchun Tan Xiangli Zhong Changjian Li Zhen Fan Jinbin Wang

国家科学评论（英文版）2026，Vol.13Issue(2)：160-168,9.

国家科学评论（英文版）2026，Vol.13Issue(2)：160-168,9.DOI:10.1093/nsr/nwaf530

High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices

Gaokuo Zhong ¹Jiangyu Li ²Jiaqi Yan ³Mingkai Tang ³Haoyue Deng ⁴Yangchun Tan ³Xiangli Zhong ⁵Changjian Li ²Zhen Fan ⁴Jinbin Wang⁵

作者信息

1. Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 430100,China||Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518000,China
2. Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen 518000,China
3. Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518000,China||National-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,China
4. Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510000,China
5. National-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,China
折叠

摘要

关键词

ferroelectric/ferroelectric field-effect transistors/high-throughput/artificial synapses/sensing-memory-computing integration

Key words

ferroelectric/ferroelectric field-effect transistors/high-throughput/artificial synapses/sensing-memory-computing integration

引用本文复制引用

Gaokuo Zhong,Jiangyu Li,Jiaqi Yan,Mingkai Tang,Haoyue Deng,Yangchun Tan,Xiangli Zhong,Changjian Li,Zhen Fan,Jinbin Wang..High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices[J].国家科学评论（英文版）,2026,13(2):160-168,9.

基金项目

This work was supported by the National Key Research and Development Program of China(2022YFF0706100 and 2022YFB3807603),the National Natural Science Foundation of China(62474186,12275230 and 52172143),the Science and Technology Innovation Program of Hunan Province(2025RC3107),the Guangdong Natural Science Funds for Dis-tinguished Young Scholar(2024B1515020053)and the Science and Technology Projects in Guangzhou(2022A04J00031). （2022YFF0706100 and 2022YFB3807603）

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