现代信息科技2026，Vol.10Issue(4)：13-16,23,5.DOI:10.19850/j.cnki.2096-4706.2026.04.003
基于双输出C单元的抗三节点翻转锁存器设计
Design of a Triple-Node Upset Tolerant Latch Based on Dual-output C-elements
唐叶1
作者信息
- 1. 安徽理工大学 计算机科学与工程学院,安徽 淮南 232001
- 折叠
摘要
Abstract
With the development of CMOS technology driving the scaling down of transistor dimensions,radiation-induced Triple-Node Upset(TNU)in CMOS circuits have become a critical issue threatening the reliability of memory devices.To mitigate the impact of soft errors on integrated circuits,this paper proposes a low-overhead latch design capable of tolerating Triple-Node Upsets(LCDOCTL).The LCDOCTL latch mainly consists of a storage module and an interception module,and achieves effective TNU tolerance by utilizing inter-cell data feedback.HSPICE simulation results show that,in comparison with existing TNU-tolerant latch designs,the proposed LCDOCTL latch achieves an average saving of 5.1%in area,70.31%in propagation delay,44.12%in power consumption and 84.66%in Power-Delay Product(PDP).关键词
辐射/软错误/锁存器/三节点翻转(TNU)/容忍Key words
radiation/soft error/latch/TNU/tolerance分类
信息技术与安全科学引用本文复制引用
唐叶..基于双输出C单元的抗三节点翻转锁存器设计[J].现代信息科技,2026,10(4):13-16,23,5.
