Uniform doping for MoS_(2)/MoTe_(2) van der Waals junction field-effect transistors with ideal subthreshold slope
摘要
关键词
junction field-effect transistor/two-dimensional materials/MoS_(2)/MoTe_(2)heterojunction/electrostatic doping/subthreshold swing/low-power electronics分类
信息技术与安全科学引用本文复制引用
Huihui Yu,Xuan Liu,Xiaofu Wei,Zhihong Cao,Zheng Zhang,Xiankun Zhang,Yue Zhang..Uniform doping for MoS_(2)/MoTe_(2) van der Waals junction field-effect transistors with ideal subthreshold slope[J].National Science Open,2025,4(5):P.35-46,12.基金项目
supported by the National Natural Science Foundation of China(52350301,52250398,92463308,62322402,52188101,52225206,92163205,62204012,52303362,62304019,52302162 and 52402169) （52350301,52250398,92463308,62322402,52188101,52225206,92163205,62204012,52303362,62304019,52302162 and 52402169）
the National Key Research and Development Program of China(2022YFA1203803,2024YFA1212600 and 2023YFF1500401) （2022YFA1203803,2024YFA1212600 and 2023YFF1500401）
the Beijing Nova Program(20220484145 and 20230484478) （20220484145 and 20230484478）
the Young Elite Scientists Sponsorship Program by China Association for Science and Technology(2022QNRC001) （2022QNRC001）
the Fundamental Research Funds for the Central Universities(FRF-TP-22-004C2,FRF-06500207,FRF-TP-22-004A1,FRF-IDRY-22-016 and FRF-IDRY-23-038) （FRF-TP-22-004C2,FRF-06500207,FRF-TP-22-004A1,FRF-IDRY-22-016 and FRF-IDRY-23-038）
the State Key Lab for Advanced Metals and Materials(2023-Z05) （2023-Z05）
the Postdoctoral Fellowship Program of the China Postdoctoral Science Foudation(GZC20230233) （GZC20230233）
the special support from the Postdoctoral Science Foundation(2023TQ0007). （2023TQ0007）
