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Dielectric engineering for scaling down two-dimensional field-effect transistors

Chaoqun Jiang Jing Hu Tao Yu Xiangdong Xu Yong Xu Zhihao Yu Zhongzhong Luo

Nano Research2026，Vol.19Issue(2)：P.805-833,29.

Nano Research2026，Vol.19Issue(2)：P.805-833,29.DOI:10.26599/NR.2025.94908077

Dielectric engineering for scaling down two-dimensional field-effect transistors

Chaoqun Jiang ¹Jing Hu ¹Tao Yu ¹Xiangdong Xu ²Yong Xu ³Zhihao Yu ⁴Zhongzhong Luo⁵

作者信息

1. College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China
2. College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
3. Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China
4. Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
5. College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China
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摘要

关键词

dielectric engineering/two-dimensional field-effect transistors/scaling down/equivalent oxide thickness/interface quality

分类

信息技术与安全科学

引用本文复制引用

Chaoqun Jiang,Jing Hu,Tao Yu,Xiangdong Xu,Yong Xu,Zhihao Yu,Zhongzhong Luo..Dielectric engineering for scaling down two-dimensional field-effect transistors[J].Nano Research,2026,19(2):P.805-833,29.

基金项目

support from the National Key R&D Program of China(No.2024YFB4405300) （No.2024YFB4405300）

the Natural Science Foundation of Jiangsu Province(No.BK20220397) （No.BK20220397）

the National Natural Science Foundation of China(Nos.62204130,62474094,and T2322014) （Nos.62204130,62474094,and T2322014）

NSFC-DFG“Mobility”project(No.M0604) （No.M0604）

Guangdong Provincial Key Laboratory of Integrated Circuit Technology and Products Based on Fully Depleted Silicon On Insulator(2024)(No.2024B1212020005) （2024）

Guangdong Province Pearl-River Talent Program(No.2023JC11X250). （No.2023JC11X250）

Nano Research

ISSN：1998-0124

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