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利用飞秒激光对六方氮化硼掺杂改性的研究

别林涛 刘晓航 王帅 朱俊杰 赵纪红 陈占国

吉林大学学报(信息科学版)2026,Vol.44Issue(1):1-8,8.
吉林大学学报(信息科学版)2026,Vol.44Issue(1):1-8,8.

利用飞秒激光对六方氮化硼掺杂改性的研究

Study on Property Modulationof Hexagonal Boron Nitride by Femtosecond Laser Doping

别林涛 1刘晓航 1王帅 1朱俊杰 1赵纪红 1陈占国1

作者信息

  • 1. 吉林大学集成光电子全国重点实验室,长春 130012||吉林大学电子科学与工程学院,长春 130012
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摘要

Abstract

To explore the feasibility of using femtosecond lasers for doping and modification of hBN(hexagonal Boron Nitride),for hBN films growing on sapphire substrates low-pressure chemical vapor deposition is used.The films are then irradiated with femtosecond lasers in an atmospheric environment.X-ray photoelectron spectroscopy results indicate that carbon and oxygen impurities from the atmosphere are incorporated into the hBN.As the laser energy density increased,the contents of carbon and oxygen impurities in hBN monotonically increased.The oxygen and some of the carbon impurities mainly occupy nitrogen vacancies in the hBN,acting as donors and acceptorsing respectively,resulting in impurity compensation.With the increase in carbon concentration,some of the carbon impurities exist in the form of clusters or interstitial atoms.The resistivity of doped hBN samples significantly decreased,reaching up to 1/800 of that of undoped samples.These results demonstrate that femtosecond laser technology can be used for doping and controlling the electrical properties of hBN.

关键词

宽禁带半导体/六方氮化硼/飞秒激光/激光加工

Key words

wide-bandgap semiconductor/hexagonal boron nitride/femtosecond laser/laser processing

分类

信息技术与安全科学

引用本文复制引用

别林涛,刘晓航,王帅,朱俊杰,赵纪红,陈占国..利用飞秒激光对六方氮化硼掺杂改性的研究[J].吉林大学学报(信息科学版),2026,44(1):1-8,8.

基金项目

国家自然科学基金资助项目(62174066) (62174066)

吉林大学学报(信息科学版)

1671-5896

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