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Synergistic performance and yield improvement of embedded RRAM product through process optimization in 40 nm CMOS platform

Zhenchao Sui Yanqing Wu Zhichao Lv Xing Zhang

半导体学报（英文版）2026，Vol.47Issue(3)：65-71,7.

半导体学报（英文版）2026，Vol.47Issue(3)：65-71,7.DOI:10.1088/1674-4926/25100021

Synergistic performance and yield improvement of embedded RRAM product through process optimization in 40 nm CMOS platform

Zhenchao Sui ¹Yanqing Wu ²Zhichao Lv ³Xing Zhang²

作者信息

1. School of Software and Microelectronics,Peking University,Beijing 102600,China||Semiconductor Manufacturing Beijing Corporation,Beijing 100176,China
2. School of Software and Microelectronics,Peking University,Beijing 102600,China
3. Hefei Reliance Memory Ltd.,Hefei 230088,China
折叠

摘要

关键词

embedded RRAM/40 nm CMOS/display driver IC/process uniformity optimization/yield improvement

Key words

embedded RRAM/40 nm CMOS/display driver IC/process uniformity optimization/yield improvement

引用本文复制引用

Zhenchao Sui,Yanqing Wu,Zhichao Lv,Xing Zhang..Synergistic performance and yield improvement of embedded RRAM product through process optimization in 40 nm CMOS platform[J].半导体学报（英文版）,2026,47(3):65-71,7.

基金项目

The authors gratefully acknowledge the technical sup-port of RRAM integration and module team of SMBC to this work. （）

半导体学报（英文版）

ISSN：1674-4926

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