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Flexible ITO TFTs with high mobility of 39.1 cm2·V-1·s-1 and excellent uniformity fabricated via mass-production compatible process

Zuoxu Yu Runxiao Shi Wangran Wu Yuzhen Zhang Tingrui Huang Wenting Xu Mingming Liu Di Gui Kaizhi Sui Guangan Yang Weifeng Sun

半导体学报（英文版）2026，Vol.47Issue(3)：72-80,9.

半导体学报（英文版）2026，Vol.47Issue(3)：72-80,9.DOI:10.1088/1674-4926/25060021

Flexible ITO TFTs with high mobility of 39.1 cm2·V-1·s-1 and excellent uniformity fabricated via mass-production compatible process

Zuoxu Yu ¹Runxiao Shi ¹Wangran Wu ¹Yuzhen Zhang ¹Tingrui Huang ¹Wenting Xu ¹Mingming Liu ¹Di Gui ¹Kaizhi Sui ¹Guangan Yang ²Weifeng Sun¹

作者信息

1. School of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
2. School of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
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摘要

关键词

InSnO/thin film transistor/large-scale uniformity/flexibility

Key words

InSnO/thin film transistor/large-scale uniformity/flexibility

引用本文复制引用

Zuoxu Yu,Runxiao Shi,Wangran Wu,Yuzhen Zhang,Tingrui Huang,Wenting Xu,Mingming Liu,Di Gui,Kaizhi Sui,Guangan Yang,Weifeng Sun..Flexible ITO TFTs with high mobility of 39.1 cm2·V-1·s-1 and excellent uniformity fabricated via mass-production compatible process[J].半导体学报（英文版）,2026,47(3):72-80,9.

基金项目

The work is supported in part by the National Natural Sci-ence Foundation of China(62274033),Natural Science Founda-tion of Jiangsu Province(BK20221453),and Fundamental Research Funds for the Central Universities. （62274033）

半导体学报（英文版）

ISSN：1674-4926

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