摘要
Abstract
According to the urgent demand for low cost and high integration in satellite communications(SATCOM)applications for civil aircraft,a Ka-band class-AB broadband power amplifier(PA)in 65 nm complementary metal oxide semiconductor(CMOS)process is presented.In this design,active amplification stages adopt a novel MOSFET source-drain swap method to optimize the layout and reduce parasitic losses for improving efficiency.Meanwhile,the neutralization capacitor technique is introduced to improve the circuit gain and stability.For the passive matching network,a design method of the transformer-based magnetically coupled resonator(MCR)is utilized to enhance PA bandwidth.On this basis,considering placement of PA signal output pads in practical engineering applications of multi-channel chip,the MCR network topology is explored for rotational bending without affecting the amplitude/phase consistency of the final output signal.This provides great convenience for arrange of the L-shaped amplifier versions around the chip edge channel and the I-shaped amplifier versions in the chip internal channel,without requiring extra chip area.According to the measurement results,the PA achieves a gain of 23 dB,a saturated output power of 14.8 dBm,a peak power added efficiency of 35.3%,a gain flatness of less than 0.5 dB within 25.5 GHz to 30.5 GHz.The fractional bandwidth of the PA is 30%from 24 GHz to 32.5 GHz.关键词
卫星通信/CMOS功率放大器/源-漏交换/耦合谐振腔Key words
satellite communications/CMOS power amplifier/source-drain swap/magnetically coupled resonatord分类
信息技术与安全科学
