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具有超晶格电子减速层的氮极性InGaN基红光LED仿真研究

王宗昊 王昱森 左长财 赵敬凯 高浩哲 刘宇亮 邓高强 杨天鹏 张源涛

发光学报2026,Vol.47Issue(2):307-313,7.
发光学报2026,Vol.47Issue(2):307-313,7.DOI:10.37188/CJL.20250229

具有超晶格电子减速层的氮极性InGaN基红光LED仿真研究

Simulation Study of N-polar InGaN-based Red LEDs with Superlattice Electron Deceleration Layer

王宗昊 1王昱森 1左长财 1赵敬凯 1高浩哲 1刘宇亮 1邓高强 1杨天鹏 1张源涛1

作者信息

  • 1. 吉林大学电子科学与工程学院,集成光电子全国重点实验室,吉林长春 130012
  • 折叠

摘要

Abstract

The low emission efficiency of InGaN-based red LEDs remains a critical bottleneck for realizing full-col-or nitride-based RGB Micro-LED displays.Enhancing carrier confinement and crystalline quality in the quantum well(QW)active region is essential to improving optical performance.Here,we propose an N-polar InGaN-based red LED featuring an n-In0.1Ga0.9N/GaN superlattice electron deceleration layer(EDL)while removing the conven-tional p-AlGaN electron blocking layer(EBL).Numerical simulations show that the superlattice EDL effectively reduces electron thermal velocity and increases electron capture efficiency within the QWs.Meanwhile,the design maintains a high electron confinement barrier and lowers the hole injection barrier,improving hole capture efficiency and suppressing electron overflow.Compared with a reference N-polar InGaN based red LED with a p-AlGaN EBL,the proposed device achieves a 16%increase in peak internal quantum efficiency and a 32%rise in optical output power.Furthermore,eliminating the p-AlGaN EBL avoids QW crystal degradation caused by high-temperature AlGaN growth,offering a promising route toward high-efficiency InGaN-based red Micro-LEDs.

关键词

InGaN/红光LED/氮极性/电子减速层

Key words

InGaN/red light-emitting diodes/nitrogen polarity/electron deceleration layer

分类

信息技术与安全科学

引用本文复制引用

王宗昊,王昱森,左长财,赵敬凯,高浩哲,刘宇亮,邓高强,杨天鹏,张源涛..具有超晶格电子减速层的氮极性InGaN基红光LED仿真研究[J].发光学报,2026,47(2):307-313,7.

基金项目

国家科技重大专项(2025ZD0615800) (2025ZD0615800)

国家自然科学基金(U22A20134,U24A20300,62474080) (U22A20134,U24A20300,62474080)

吉林省科技发展计划项目(SKL202402002)Supported by Advanced Materials-National Science and Technology Major Project(2025ZD0615800) (SKL202402002)

National Natural Science Foundation of China(U22A20134,U24A20300,62474080) (U22A20134,U24A20300,62474080)

Science and Technology Development Plan Project of Jilin Prov-ince(SKL202402002) (SKL202402002)

发光学报

1000-7032

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