有色金属材料与工程2026，Vol.47Issue(1)：54-63,10.DOI:10.13258/j.cnki.nmme.20250604001
晶硅异质结光伏技术中透明导电氧化物靶材的研究进展与挑战
Research progress and challenges of transparent conductive oxide sputtering targets in crystalline silicon heterojunction photovoltaic technology
摘要
Abstract
Crystalline silicon heterojunction(HJT)cells,recognized as third-generation photovoltaic technology,overcome the efficiency limitations of PERC and TOPCon through low-temperature process compatibility,high open-circuit voltage,and superior temperature coefficients.Their efficiency ceiling and industrialization process rely critically on multifunctional coordination within transparent conductive oxide(TCO)layers.High-mobility sputtering targets optimized via conduction band dispersion have enabled efficiency breakthroughs,while indium scarcity drives indium-free TCO development.Industrially,physical vapor deposition(PVD)dominates manufacturing due to high deposition rates and localized equipment,whereas reactive plasma deposition(RPD)achieves higher mobility through low-energy particle-induced lattice matching but faces constraints from imported equipment costs and low target utilization.Future advancements demand precise laboratory-to-production mapping of target properties,with roll-to-roll(R2R)process integration and perovskite/silicon tandem spectral synergy poised to propel HJT-based high-efficiency,low-carbon photovoltaic industrialization.关键词
晶硅异质结电池/透明导电氧化物薄膜/溅射靶材Key words
crystalline silicon heterojunction cell/transparent conductive oxide thin film/sputtering target分类
信息技术与安全科学引用本文复制引用
高钰航,葛春桥,陈露,李强,丁金铎..晶硅异质结光伏技术中透明导电氧化物靶材的研究进展与挑战[J].有色金属材料与工程,2026,47(1):54-63,10.基金项目
中山市科技计划资助项目(LJ2021006 （）
CXTD2022005 （）
2022A1009) （）
