国家科学评论（英文版）2026，Vol.13Issue(4)：3-6,4.DOI:10.1093/nsr/nwag069
Simulating the Hubbard model with moiré semiconductors
Simulating the Hubbard model with moiré semiconductors
Kin Fai Mak 1Jie Shan1
作者信息
- 1. Max Planck Institute for the Structure and Dynamics of Matter,Germany||School of Applied and Engineering Physics,Cornell University,USA||Laboratory of Atomic and Solid State Physics,Cornell University,USA||Kavli Institute at Cornell for Nanoscale Science,USA
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Kin Fai Mak,Jie Shan..Simulating the Hubbard model with moiré semiconductors[J].国家科学评论（英文版）,2026,13(4):3-6,4.
