人工晶体学报2026，Vol.55Issue(2)：223-232,10.DOI:10.16553/j.cnki.issn1000-985x.2025.0213
组分无序对Ga2O3/(AlxGa1-x)2O3核/壳量子盘中界面类氢杂质光电离截面的影响
Effect of Compositional Disorder on Photoionization Cross Section of Interfacial Hydrogenic Impurity in Ga2O3/(AlxGa1-x)2O3 Core/Shell Quantum Disk
摘要
Abstract
In this paper,a novel core/shell quantum disk structure consisting of the fourth ultrawide band gap semiconductors Ga2O3 as core layer and(AlxGa1-x)2O3as shell layer were presented.The optical intersubband transitions and corresponding photoionization cross sections between the impurity ground state and unbound state,as well as between different impurity bound states in core/shell quantum disk structure were studied by the finite-difference algorithm combined with the variational approach.The influence from the aluminum compositional disorder was taken into account in the numerical simulation for the first time.The results indicate that the compositional disorder effect has negligible impact on the photoionization cross section corresponding the transition from the impurity ground state to the unbound state.In contrast,the photoionization cross sections of transitions between different impurity-bound states exhibit notable change in resonance peaks due to the random potential fluctuation induced by compositional disorder.These findings can provide theoretical guidelines for further exploration of photonic and optoelectronic devices based on ultrawide bandgap materials.关键词
Ga2O3/核/壳量子盘/组分无序/光电离截面/结合能/波函数Key words
Ga2O3/core/shell quantum disk/compositional disorder/photoionization cross section/binding energy/wave function分类
数理科学引用本文复制引用
杨昊,哈斯花,朱俊..组分无序对Ga2O3/(AlxGa1-x)2O3核/壳量子盘中界面类氢杂质光电离截面的影响[J].人工晶体学报,2026,55(2):223-232,10.基金项目
国家自然科学基金(12164031,62364014) （12164031,62364014）
内蒙古自治区自然科学基金(2025MS01031,2023LHMS01004) （2025MS01031,2023LHMS01004）
内蒙古自治区直属高校基本科研业务费项目(JY20240041) （JY20240041）
