爆破器材2026，Vol.55Issue(2)：8-14,7.DOI:10.3969/j.issn.1001-8352.2026.02.002
Al/Bi2O3含能半导体桥的安全性能研究
Safety Performances of Al/Bi2O3 Energetic Semiconductor Bridge
摘要
Abstract
To address the issue of low output energy in pyrotechnics based on semiconductor bridges(SCB),an energetic semiconductor bridge(ESCB)integrated with Al/Bi2O3 energetic films and SCB was designed and prepared.The safety performances of ESCB were evaluated through constant current safety tests,electromagnetic irradiation tests,and e-lectrostatic safety tests.Meanwhile,SCB and Al/Bi2O3-ESCB were ignited on B/KNO3 insensitive ignition powder to verify the output performance of Al/Bi2O3-ESCB.The results indicate that the prepared Al/Bi2O3 energetic film possesses uniform composition and a smooth structure.The Al/Bi2O3-ESCB integrated with the semiconductor bridge exhibits excellent safety performance.The safe current reaches 1.2 A.It can withstand electromagnetic irradiation under three conditions(100 MHz at 700 V/m,400 MHz at 700 V/m,and 900 MHz at 560 V/m)without significant performance degradation.In electrosta-tic discharge test,it does not ignite and its resistance does not change significantly.Compared to SCB,Al/Bi2O3-ESCB significantly enhances the resistance to constant current excitation and improves ignition output capability.Specifically,when excited by a 47 μF and 50 V capacitor,it can reliably ignite the B/KNO3 insensitive ignition powder under both con-tact conditions and non-contact conditions with a gap of 1.3 mm or less.关键词
含能薄膜/半导体桥/Al/Bi2O3/安全性能Key words
energetic film/semiconductor bridge/Al/Bi2O3/safety performance分类
军事科技引用本文复制引用
王云鹏,董晓芬,王端,王凯炳..Al/Bi2O3含能半导体桥的安全性能研究[J].爆破器材,2026,55(2):8-14,7.基金项目
山西省高等学校科技创新计划项目(2024L474) （2024L474）
