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Oxide Semiconductor for Advanced Memory Architectures:Atomic Layer Deposition,Key Requirement and Challenges

Chi-Hoon Lee Seong-Hwan Ryu Taewon Hwang Sang-Hyun Kim Yoon-Seo Kim Jin-Seong Park

纳微快报（英文）2026，Vol.18Issue(6)：80-124,45.

纳微快报（英文）2026，Vol.18Issue(6)：80-124,45.DOI:10.1007/s40820-025-02013-7

Oxide Semiconductor for Advanced Memory Architectures:Atomic Layer Deposition,Key Requirement and Challenges

Chi-Hoon Lee ¹Seong-Hwan Ryu ¹Taewon Hwang ¹Sang-Hyun Kim ²Yoon-Seo Kim ³Jin-Seong Park⁴

作者信息

1. Division of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
2. Department of Display Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
3. Division of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea||Imec,Kapeldreef 75,B-3001 Louvain,Belgium
4. Division of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea||Department of Display Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
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摘要

关键词

Oxide semiconductor(OS)/Atomic layer deposition(ALD)/Memory applications

Key words

Oxide semiconductor(OS)/Atomic layer deposition(ALD)/Memory applications

引用本文复制引用

Chi-Hoon Lee,Seong-Hwan Ryu,Taewon Hwang,Sang-Hyun Kim,Yoon-Seo Kim,Jin-Seong Park..Oxide Semiconductor for Advanced Memory Architectures:Atomic Layer Deposition,Key Requirement and Challenges[J].纳微快报（英文）,2026,18(6):80-124,45.

基金项目

This work was supported by National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(No.RS-2023-00260527,RS-2024-00407282,RS-2025-00557667),supported by Hanyang Uni-versity Industry-University Cooperation Foundation(No.202400000003943),supported by Korea Planning & Evaluation Institute of Industrial Technology(KEIT)funded by South Korean Ministry of Trade,Industry and Energy(MOTIE)(No.RS-2025-25454815,RS-2025-02308064,20017382). （NRF）

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ISSN：2311-6706

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