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基于自旋-轨道力矩效应的电流驱动垂直磁矩无场翻转研究

赵云驰 张毅 祁杰 张静言 于国强 魏红祥 张颖 沈保根 王守国

物理学报2026,Vol.75Issue(6):125-146,22.
物理学报2026,Vol.75Issue(6):125-146,22.DOI:10.7498/aps.75.20251630

基于自旋-轨道力矩效应的电流驱动垂直磁矩无场翻转研究

Field-free switching of perpendicular magnetization driven by spin-orbit torque

赵云驰 1张毅 2祁杰 3张静言 4于国强 1魏红祥 1张颖 1沈保根 5王守国3

作者信息

  • 1. 中国科学院物理研究所,北京凝聚态物理国家研究中心,北京 100190
  • 2. 中国科学院物理研究所,北京凝聚态物理国家研究中心,北京 100190||北京科技大学材料科学与工程学院材料物理与化学系,北京 100083
  • 3. 安徽大学材料科学与工程学院,安徽省磁性功能材料与器件重点实验室,合肥 230601
  • 4. 北京科技大学材料科学与工程学院材料物理与化学系,北京 100083
  • 5. 中国科学院物理研究所,北京凝聚态物理国家研究中心,北京 100190||安徽大学材料科学与工程学院,安徽省磁性功能材料与器件重点实验室,合肥 230601
  • 折叠

摘要

Abstract

Magnetic random-access memory(MRAM)based on spin-orbit torque(SOT)is a promising non-volatile memory technology for the post-Moore era,owing to its fast switching speed,superior endurance,and potential for low-power operation.However,achieving deterministic current-induced magnetization switching in high-density perpendicular magnetic anisotropy systems,without reliance on external magnetic fields,remains a critical bottleneck,impeding its widespread commercial application.This review surveys recent progress of SOT-driven field-free switching of perpendicular magnetization and gives a coherent overview of symmetry-breaking mechanisms and device-level implications.Strategies that create intrinsic effective fields through engineered structural asymmetry(e.g.,wedged layers and asymmetric interfaces)and built-in gradients such as composition or oxidation profiles are summarized.Approaches based on magnetic interactions,including antiferromagnetic exchange bias and interlayer coupling in multilayer and synthetic antiferromagnetic structures,are also discussed.Then,emerging mechanisms implemented by low-symmetry crystals and topological materials are highlighted,in which nontraditional spin textures and out-of-plane spin polarization contribute to deterministic PMA switching in the absence of external fields.In addition,recent demonstrations of SOT-driven self-switching in magnetic single-layer systems are introduced.Finally,opportunities and remaining challenges for SOT-based spintronic devices are outlined in the context of future information technology,with a focus on determined switching,write-current reduction,thermal stability,device variability,endurance,and CMOS-compatible integration.

关键词

自旋电子学/自旋-轨道力矩/磁性薄膜材料

Key words

spintronics/spin-orbit torque/magnetic thin films

引用本文复制引用

赵云驰,张毅,祁杰,张静言,于国强,魏红祥,张颖,沈保根,王守国..基于自旋-轨道力矩效应的电流驱动垂直磁矩无场翻转研究[J].物理学报,2026,75(6):125-146,22.

基金项目

国家重点研发计划(批准号:2022YFA1402602)和国家自然科学基金(批准号:52130103,12104486,51971026,12374099,12174426)资助的课题. Project supported by the National Key R&D Program of China(Grant No.2022YFA1402602)and the National Natural Science Foundation of China(Grant Nos.52130103,12104486,51971026,12374099,12174426). (批准号:2022YFA1402602)

物理学报

1000-3290

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