太赫兹科学与电子信息学报2026，Vol.24Issue(2)：107-127,21.DOI:10.11805/TKYDA2025302
太赫兹固态器件研究进展
Research progress in terahertz solid-state devices
摘要
Abstract
The terahertz(THz)frequency band(0.1～10 THz),situated between millimeter waves and infrared light,possesses unique physical characteristics and has become a critical technology in modern communication,imaging,sensing,and security detection.This article summarizes the research progress in terahertz solid-state devices,with a particular focus on the technological development of key circuits such as terahertz solid-state Power Amplifiers(PA),Low-Noise Amplifiers(LNA),frequency multipliers,and mixers.With continuous breakthroughs in materials and processes,terahertz devices have gradually achieved high integration,miniaturization,and low cost,especially with remarkable progress in the application of GaN,InP,and silicon-based technologies.This article also discusses the challenges and future development directions of terahertz solid-state devices,including innovations in material systems,integrated design of devices and circuits,and system optimization.关键词
太赫兹频段/固态器件/功率放大器/低噪声放大器/倍频器/混频器/集成电路Key words
THz band/solid-state devices/Power Amplifiers(PA)/Low-Noise Amplifiers(LNA)/frequency multiplier/mixer/integrated circuit分类
信息技术与安全科学引用本文复制引用
杨琪,周骜,郭方金,陈忠飞,王宏强,王维波..太赫兹固态器件研究进展[J].太赫兹科学与电子信息学报,2026,24(2):107-127,21.基金项目
国家自然科学基金资助项目(62201591 （）
62035014) （）
湖南省科技创新计划资助项目(2024RC3143) （2024RC3143）
