电子科技学刊2026，Vol.24Issue(1)：77-85,9.DOI:10.1016/j.jnlest.2026.100347
β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging
β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging
Zi-Lin Hao 1Chen-Yi Dai 2Zheng Zhang 1Yuan-Xi Jia 3Xue-Feng Wu1
作者信息
- 1. Beijing Microelectronics Technology Institute,Beijing,100076,China
- 2. Beijing Microelectronics Technology Institute,Beijing,100076,China||School of Integrated Circuits,Tsinghua University,Beijing,100084,China
- 3. Beijing Yuxiang Electronics Co.,Ltd.,Beijing,100010,China
- 折叠
摘要
关键词
Flip-chip packaging/Surge robustness/Thermal resistance/Ultrawide bandgap semiconductor/β-Ga2O3Key words
Flip-chip packaging/Surge robustness/Thermal resistance/Ultrawide bandgap semiconductor/β-Ga2O3引用本文复制引用
Zi-Lin Hao,Chen-Yi Dai,Zheng Zhang,Yuan-Xi Jia,Xue-Feng Wu..β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging[J].电子科技学刊,2026,24(1):77-85,9.
