桂林理工大学学报2025，Vol.45Issue(6)：916-921,6.DOI:10.3969/j.issn.1674-9057.2025.06.014
掺铕氧化铟薄膜的制备与发光特性
Preparation and photoelectric properties of indium oxide films with mixed europium
摘要
Abstract
Europium-doped indium oxide(In2O3:Eu)thin films are prepared on quartz substrates by RF magne-tron sputtering.The crystal structure,surface morphology and optical band gap of In2O3:Eu thin films are charac-terized by X-ray diffractometer(XRD),scanning electron microscope(SEM)and ultraviolet-visible spectropho-tometer.The photoluminescence(PL)spectra of In2O3:Eu thin films are measured at room temperature.The re-sults show that pure oxygen atmosphere and annealing improve the crystal quality of In2O3:Eu thin films.The transmittance and optical band gap of In2O3:Eu films increase after annealing.The luminescence of In2O3:Eu thin film is mainly the broadband emission of the defect level and the composite luminescence of 5D →7F3 of Eu3+.After annealing,the relative intensity of Eu3+luminescence peak increases.关键词
氧化铟/铕掺杂/光致发光Key words
indium oxide/europium doping/photoluminescence分类
数理科学引用本文复制引用
周鸥翔,孙辉,韩梦瑶,沈龙海..掺铕氧化铟薄膜的制备与发光特性[J].桂林理工大学学报,2025,45(6):916-921,6.基金项目
国家自然科学基金项目(12274304) （12274304）
超硬材料国家重点实验室开放课题(202004) （202004）
