红外与毫米波学报2026，Vol.45Issue(1)：97-102,6.DOI:10.11972/j.issn.1001-9014.2026.01.011
外延电阻对深亚微米MOSFET噪声性能的影响
Effect of extrinsic resistance on noise performance for deep submicron MOSFET
摘要
Abstract
This paper investigates the impact of extrinsic resistance on the noise performance of deep submicron MOSFETs(metal-oxide-semiconductor field-effect-transistor)using the noise correlation matrix method.Analyti-cal closed-form expressions for calculating the four noise parameters are derived based on the small-signal and noise-equivalent circuit models.The results show strong agreement between simulated and experimental data for MOSFETs with a gate length of 40 nm and dimensions of 4×5 µm(number of gate fingers×unit gate width.关键词
等效电路/MOSFET/参数提取/噪声模型/小信号模型Key words
equivalent circuits/MOSFET/parameter extraction/noise model/small signal model分类
数理科学引用本文复制引用
高涵祺,金晶,周健军..外延电阻对深亚微米MOSFET噪声性能的影响[J].红外与毫米波学报,2026,45(1):97-102,6.基金项目
Supported by the National Key R&D Program of China(2020YFB1807301),the National Natural ScienceFoundation of China(2024-MMT-07). （2020YFB1807301）
