人工晶体学报2026，Vol.55Issue(3)：378-386,9.DOI:10.16553/j.cnki.issn1000-985x.2025.0225
激光剥离对4H-SiC衬底应力及面型的影响研究
Effect of Laser Slicing on Stress and Wafer Shape of 4H-SiC Substrates
摘要
Abstract
Under the background of the rapid development of third-generation semiconductors and the growing demand for large-size,low-warp 8-inch(1 inch=2.54 cm)4H-SiC substrates,the traditional multi-wire sawing suffers from large material loss and limited capability in precisely controlling residual stress and wafer shape.However,the existing laser slicing studies are mostly focused on small-size or semi-insulating 4H-SiC,and a systematic understanding of the correlation among process parameters,residual stress,and wafer shape for conductive 8-inch 4° off-axis ingots under engineering conditions is still lacking.In this work,the 8-inch conductive N-type 4° off-axis 4H-SiC ingots are used as the research object.Internal modification is introduced by 1 064 nm picosecond laser irradiation combined with ultrasonic slicing,while the scanning speed(50～400 mm/s)is systematically varied.By means of SEM/TEM/SAED,Raman depth profiling,high-resolution XRD combined with the Stoney equation,lattice stress analysis and full-aperture wafer-shape measurements,a multi-scale evaluation chain is established from the microscopic modified layer to the macroscopic warp of the whole wafer.This paper clarifies the nucleation and propagation mechanism of SiC cracks along the[11-20]crystallographic direction induced by picosecond laser irradiation,and reveals influence of laser scanning speed on the slicing efficiency,stress distribution and wafer shape quality of 8-inch SiC substrates from both micro-and macro-perspectives.The paper provides theoretical support and process-optimization pathways for high-quality laser slicing fabrication of 8-inch 4H-SiC wafers,and offers a reference research idea for achieving controllable wafer shape tuning of SiC substrates based on laser-modified layers.关键词
4H-SiC晶圆/皮秒激光剥离/等效残余应力/晶圆面型/翘曲度Key words
4H-SiC wafer/picosecond laser slicing/equivalent residual stress/wafer shape/Warp分类
数理科学引用本文复制引用
胡浩林,李齐治,佘文婧,邹兴,卢致涛,陈刚,王映德,万玉喜..激光剥离对4H-SiC衬底应力及面型的影响研究[J].人工晶体学报,2026,55(3):378-386,9.基金项目
深圳市科技计划(KJZD20240903102738050,JCYJ20241202130514019) （KJZD20240903102738050,JCYJ20241202130514019）
