人工晶体学报2026，Vol.55Issue(3)：439-451,13.DOI:10.16553/j.cnki.issn1000-985x.2025.0222
垂直布里奇曼法β-Ga2O3晶体生长过程中的内辐射传热研究
Internal Radiation During β-Ga2O3 Crystal Growth Process by Vertical Bridgman Method
摘要
Abstract
β-phase gallium oxide(β-Ga2O3)crystals have become a key material for high-power devices due to their ultra-wide bandgap characteristics.The vertical Bridgman(VB)method is currently the most promising approach for commercial-scale growth of gallium oxide single crystals.However,the semi-transparent nature of gallium oxide crystals and melts can cause significant internal radiation,which affects the temperature and flow fields during crystal growth process,and thus the crystal quality.Therefore,in this paper,a heat transfer numerical model for the growth process of gallium oxide crystals by VB method was established using the finite element software Comsol Multiphysics.The influence of internal radiation on the temperature field,melt flow field,melt-crystal interface,and crystal thermal stress was systematically investigated.The numerical simulation results show that the internal radiation in the crystal significantly enhances the thermal transport of the crystal.The radiation heat from the melt-crystal interface can directly penetrate the semi-transparent crystal to the crucible wall,reducing the temperature gradient and thermal stress inside the crystal.This radiation directly cools the melt-crystal interface,causing a downward trend in the temperature at the interface.To maintain the melting point temperature,the melt-crystal interface must move towards the upper high-temperature melt,increasing the convexity of the interface.The internal radiation in the melt also affects the heat transfer in the melt region.The radiation from the hot zone can penetrate the melt to the melt-crystal interface,radiatively heating the interface.Therefore,the melt-crystal interface moves towards the crystal side,and the convexity of the interface shape decreases,presenting a W-shaped distribution.However,since the isothermal lines and thermal stress of the crystal mainly accumulate at the bottom of the crystal,the effect on the temperature gradient and thermal stress inside the crystal is small.In addition,the sensitivity of internal radiation to the absorption coefficients of the crystal and melt was systematically analyzed.It was found that as the absorption coefficient of the crystal decreases,the internal radiation in the crystal increases,the temperature gradients in the melt and crystal decrease,the thermal stress of the crystal decreases,and the convexity of the melt-crystal interface increases,leading to an uneven radial distribution of solutes.As the absorption coefficient of the melt decreases,the internal radiation in the melt increases,the temperature gradient and thermal stress at the bottom of the crystal slightly decrease,the convexity of the melt-crystal interface at the center decreases,the W-shaped distribution becomes more obvious,and the edges are more prone to polycrystalline nucleation,thereby affecting the crystal quality.关键词
氧化镓晶体/垂直布里奇曼法/内辐射传热/热应力/数值模拟Key words
gallium oxide crystal/vertical Bridgman method/internal radiation/thermal stress/numerical simulation分类
数理科学引用本文复制引用
赵琪,刘奕豪,齐小方,马文成,徐永宽,胡章贵..垂直布里奇曼法β-Ga2O3晶体生长过程中的内辐射传热研究[J].人工晶体学报,2026,55(3):439-451,13.基金项目
国家自然科学基金(51906086,52327801) （51906086,52327801）
