液晶与显示2026，Vol.41Issue(3)：353-362,10.DOI:10.37188/CJLCD.2025-0240
基于TFE中SiON薄膜变化引起的OLED挖孔屏孔区彩虹纹现象
Rainbow phenomenon in the punch-hole area of OLED displays caused by SiON thin films changes in TFE
摘要
Abstract
In recent years,with the development of tendency toward thinner smartphones and higher reliability(RA)requirements,the proportion of OLED panels exhibiting rainbow phenomenon around the punch-hole area has increased.In response to this phenomenon,we established qualitative and quantitative analyses methods to identify the reasons of this phenomenon and conducted a comprehensive,mutually corroborative set of multi-dimensional analytical testing methods.Furthermore,with optimization of the TFE film-stack composition,the risk of dark spots could be minimized after RA tests,which is associated with rainbow-mura formation in OLED punch-hole displays.Through the cleavage of panel module,rainbow-mura around the punch-hole area was exactly located.Cross-sectional TEM,TOF-SIMS and XPS were then used to elucidate the formation mechanism.The data show that the SiON layer in CVD1 can be gradually converted to SiO under high temperature and high humidity conditions;TEM and TOF-SIMS results reveal that nitrogen content in SiON is below 2%after RA tests,while XPS peaks indicate that the SiON on the CVD1-2 surface has been almost completely transformed into SiO.By increasing the refractive index of the SiON layer from 1.72 to 1.76 in CVD1-1 of the TFE,the oxidation depth of the SiON film was reduced by 70%.The above-mentioned establishment of analytical method not only clarifies that the rainbow-mura phenomenon around the punch-hole is caused by the formation of SiO due to film oxidation,but also quantifies the influences of the punch-hole regions under long-term RA test.This strategic approach provides a viable solution path for OLED's future deployments in automotive,IT signage,and other applications with more stringent reliability requirements.关键词
彩虹纹现象/OLED挖孔屏/薄膜封装/氮氧化硅/氧化硅Key words
rainbow phenomenon/punch-hole in OLED displays/thin-film encapsulation/silicon oxynitride/silicon oxide分类
信息技术与安全科学引用本文复制引用
蔡汉坤,杨金金,李佐斌,涂秋梅,张国峰..基于TFE中SiON薄膜变化引起的OLED挖孔屏孔区彩虹纹现象[J].液晶与显示,2026,41(3):353-362,10.基金项目
国家重点研发计划(No.2023YFB3612002) （No.2023YFB3612002）
厦门市科技计划(No.3502Z20231052)Supported by National Key Research and Development Program of China(No.2023YFB3612002) （No.3502Z20231052）
Xiamen Science and Technology Plan(No.3502Z20231052) （No.3502Z20231052）
