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Introducing oxygen evolution promoting hole defect states at BiVO_(4)surface for enhanced photoelectrochemical activity

Fatima Chmali Basanth S.Kalanoor Shankara S.Kalanur Bruno G.Pollet

Nano Materials Science2026，Vol.8Issue(2)：P.339-350,12.

Nano Materials Science2026，Vol.8Issue(2)：P.339-350,12.DOI:10.1016/j.nanoms.2024.09.009

Introducing oxygen evolution promoting hole defect states at BiVO_(4)surface for enhanced photoelectrochemical activity

Fatima Chmali ¹Basanth S.Kalanoor ²Shankara S.Kalanur ³Bruno G.Pollet³

作者信息

1. Universite de Montpellier,Place Eugene Bataillon,Bat.15,34095 Montpellier Cedex 5,France
2. Centre for Atomic and Molecular Physics(CAMP),Manipal University,Manipal,India
3. GreenH2Lab,Hydrogen Research Institute(HRI),Department of Chemistry,Biochemistry and Physics,Universite Du Quebeca Trois-Rivieres(UQTR),3351 Boulevard des Forges,Trois Rivieres,QC G9A 5H7,Canada
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摘要

关键词

Cd doping/BiVO_(4)/Hope trap states/Bi lattice sites/Stability

分类

化学化工

引用本文复制引用

Fatima Chmali,Basanth S.Kalanoor,Shankara S.Kalanur,Bruno G.Pollet..Introducing oxygen evolution promoting hole defect states at BiVO_(4)surface for enhanced photoelectrochemical activity[J].Nano Materials Science,2026,8(2):P.339-350,12.

基金项目

the support of the Natural Sciences and Engineering Research Council of Canada(NSERC)Tier 1 Canada Research Chair in Green Hydrogen Production,the Québec Ministère de l''Économie,de l''Innovation et de l''Énergie(MEIE)[Développement de catalyseurs et d''électrodes innovants,àfaibles coûts,performants et durables pour la production d''hydrogène vert,funding reference number 00393501]。（NSERC）

Nano Materials Science

ISSN：2096-6482

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