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Ultrathin van der Waals ferroelectric oxides for scalable low-power memory

Xiaokun Qin Bowen Zhong Zheng Lou Lili Wang

半导体学报（英文版）2026，Vol.47Issue(4)：9-12,4.

半导体学报（英文版）2026，Vol.47Issue(4)：9-12,4.DOI:10.1088/1674-4926/26020015

Ultrathin van der Waals ferroelectric oxides for scalable low-power memory

Xiaokun Qin ¹Bowen Zhong ¹Zheng Lou ¹Lili Wang¹

作者信息

1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

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Xiaokun Qin,Bowen Zhong,Zheng Lou,Lili Wang..Ultrathin van der Waals ferroelectric oxides for scalable low-power memory[J].半导体学报（英文版）,2026,47(4):9-12,4.

基金项目

The authors sincerely acknowledge financial support from the Beijing Natural Science Foundation-Xiaomi Innova-tion Joint Fund(L233009). （L233009）

半导体学报（英文版）

ISSN：1674-4926

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