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Transport mechanism of oxide-based programmable diode

Junru Qu Wentai Xia Jifang Cao Xueyang Li Ran Cheng Dong Liu Bing Chen

半导体学报（英文版）2026，Vol.47Issue(4)：58-64,7.

半导体学报（英文版）2026，Vol.47Issue(4)：58-64,7.DOI:10.1088/1674-4926/25090006

Transport mechanism of oxide-based programmable diode

Junru Qu ¹Wentai Xia ¹Jifang Cao ¹Xueyang Li ¹Ran Cheng ¹Dong Liu ²Bing Chen³

作者信息

1. College of Integrated Circuits,Zhejiang University,Hangzhou 310058,China
2. Polytechnic Institution,Zhejiang University,Hangzhou 310058,China
3. School of Microelectronics,Xidian University,Xi'an 710071,China||Hangzhou Institute of Technology,Xidian University,Hangzhou 311231,China
折叠

摘要

关键词

diode/oxide/resistive switching

Key words

diode/oxide/resistive switching

引用本文复制引用

Junru Qu,Wentai Xia,Jifang Cao,Xueyang Li,Ran Cheng,Dong Liu,Bing Chen..Transport mechanism of oxide-based programmable diode[J].半导体学报（英文版）,2026,47(4):58-64,7.

基金项目

This work was supported by the National Science Founda-tion of China(Grant No.62174146). （Grant No.62174146）

半导体学报（英文版）

ISSN：1674-4926

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