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Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices:role of hydrogen in the passivation layer

Shilong Gou Wuying Ma Zhibin Yao Zujun Wang Jiangkun Sheng Yuanyuan Xue

半导体学报（英文版）2026，Vol.47Issue(4)：77-85,9.

半导体学报（英文版）2026，Vol.47Issue(4)：77-85,9.DOI:10.1088/1674-4926/25090014

Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices:role of hydrogen in the passivation layer

Shilong Gou ¹Wuying Ma ¹Zhibin Yao ¹Zujun Wang ¹Jiangkun Sheng ¹Yuanyuan Xue¹

作者信息

1. National Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,China
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摘要

关键词

bipolar integrated circuits/passivation layers/enhanced low dose rate sensitivity/pre-irradiation elevated-tempera-ture stress

Key words

bipolar integrated circuits/passivation layers/enhanced low dose rate sensitivity/pre-irradiation elevated-tempera-ture stress

引用本文复制引用

Shilong Gou,Wuying Ma,Zhibin Yao,Zujun Wang,Jiangkun Sheng,Yuanyuan Xue..Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices:role of hydrogen in the passivation layer[J].半导体学报（英文版）,2026,47(4):77-85,9.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(Grant No.12105229). （Grant No.12105229）

半导体学报（英文版）

ISSN：1674-4926

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