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p-GaN HEMT current reference and current mirror for high temperature application

Pingyu Cao Kepeng Zhao Zhengxuan Li Yihao Xu Ping Zhang Harm Van Zalinge Miao Cui Fei Xue

半导体学报（英文版）2026，Vol.47Issue(4)：93-101,9.

半导体学报（英文版）2026，Vol.47Issue(4)：93-101,9.DOI:10.1088/1674-4926/25070035

p-GaN HEMT current reference and current mirror for high temperature application

Pingyu Cao ¹Kepeng Zhao ¹Zhengxuan Li ¹Yihao Xu ¹Ping Zhang ²Harm Van Zalinge ³Miao Cui ¹Fei Xue¹

作者信息

1. Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.
2. Department of Communications and Networking,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China
3. Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.
折叠

摘要

关键词

p-GaN HEMTs/current reference/current mirror/high-temperature application/supply voltage insensitivity/monolithic integration

Key words

p-GaN HEMTs/current reference/current mirror/high-temperature application/supply voltage insensitivity/monolithic integration

引用本文复制引用

Pingyu Cao,Kepeng Zhao,Zhengxuan Li,Yihao Xu,Ping Zhang,Harm Van Zalinge,Miao Cui,Fei Xue..p-GaN HEMT current reference and current mirror for high temperature application[J].半导体学报（英文版）,2026,47(4):93-101,9.

基金项目

This work was supported by XJTLU Research Develop-ment Fund(RDF-21-02-031,PGRS2206039). （RDF-21-02-031,PGRS2206039）

半导体学报（英文版）

ISSN：1674-4926

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