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Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures

Arely Vázquez Jiménez Mario Moreno Moreno Liliana Palacios Huerta Pedro Rosales Quintero Alfredo Morales Sánchez

半导体学报（英文版）2026，Vol.47Issue(4)：108-115,8.

半导体学报（英文版）2026，Vol.47Issue(4)：108-115,8.DOI:10.1088/1674-4926/25100015

Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures

Arely Vázquez Jiménez ¹Mario Moreno Moreno ¹Liliana Palacios Huerta ²Pedro Rosales Quintero ¹Alfredo Morales Sánchez¹

作者信息

1. Instituto Nacional de Astrofísica,Óptica y Electrónica,Luis Enrique Erro No.1,72840,Sta.Ma.Tonantzintla,Puebla,Mexico
2. UPIIT,Instituto Politécnico Nacional,Tlaxcala 90000,Mexico
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摘要

关键词

resistive switching/silicon nanocrystals/silicon nitride/memristor

Key words

resistive switching/silicon nanocrystals/silicon nitride/memristor

引用本文复制引用

Arely Vázquez Jiménez,Mario Moreno Moreno,Liliana Palacios Huerta,Pedro Rosales Quintero,Alfredo Morales Sánchez..Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures[J].半导体学报（英文版）,2026,47(4):108-115,8.

基金项目

Authors would like to thank technicians Juan Aviles Bravo,Victor Aca Aca,Ignacio Juárez Ramírez,Armando Her-nandez Flores and Ramon Ramos Serrano for their support in devices fabrication.The help of Leticia Tecuapetla Quechol is also appreciated for Raman measurements.Special thanks are extended to Dr.Miriam Carolina Mendoza for TEM measure-ments and to Dr.Carlos Ramirez Netzahualcoyotl for his sup-port in FIB lamella preparation. A.Vázquez Jiménez acknowledges to the Secretaría de Ciencia,Humanidades,Tecnología e Innovación(Secihti)of Mexico for the PhD scholarship grant No.1080227. （Secihti）

半导体学报（英文版）

ISSN：1674-4926

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