电化学（中英文）2026，Vol.32Issue(2)：33-45,13.DOI:10.61558/2993-074X.3591
三苯甲烷类染料整平剂用于再布线层高速电镀铜的形貌调控机制研究
Triphenylmethane-Derived Levelers for High-Speed Redistribution Layer Copper Electroplating of Tailored Surface Morphologies
摘要
Abstract
Redistribution Layer(RDL),composed of layered dielectrics and electroplated copper materials,is a basic structure to rearrange numerous I/O pads on the chip surface in wafer-level advanced packaging.As the key chemicals in electrolyte baths,electroplating additives have undergone continuous development to meet the industrial needs for high-speed and fine-line/fine-pitch applications.Meanwhile,the intricate relationships between additive chemical structures and electro-plated copper properties are yet to be well understood.In this work,a pair of triphenylmethane-based dye molecules,i.e.,gentian violet(GV)and methyl green(MG),was comparatively investigated as levelers for high-speed RDL copper electroplating.Compared to GV,significantly stronger electrochemical polarization and tunable deposit morphology can be achieved by MG with just one extra quaternized amine terminal.Combining quantum chemical computations,in situ spectroelectrochemical analyses,and microstructural characterization,it is found that MG possesses enhanced electrostatic adsorption,surface coverage and multi-additive synergies,enabling tailored copper trace morphology.This study elab-orates the adsorption mechanism and screening criteria of triphenylmethane-derived levelers,and presents a candidate additive structure for high-speed copper electroplating.关键词
再布线层/电镀整平剂/理论计算/电化学原位红外光谱/微观结构表征Key words
Redistribution layer/Copper electroplating leveler/Theoretical computation/In situ spectroelectrochemical analysis/Microstructural characterization引用本文复制引用
宋子豪,肖梅玲,廖洪钢,徐维林,孙蓉,王伟斌,柳晓辉,韩晓敏,周毅,黄蕊,姜艳霞,李哲,刘晓伟..三苯甲烷类染料整平剂用于再布线层高速电镀铜的形貌调控机制研究[J].电化学（中英文）,2026,32(2):33-45,13.基金项目
This work was financially supported by National Natural Science Foundation of China(Grant Nos.62304143,22425204,U22A20396 and 22288102),National Key Research and Development Pro-gram of China(Grants No.2023YFA1507202)and the autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits(No.SKLJC-Z2024-C03). （Grant Nos.62304143,22425204,U22A20396 and 22288102）
