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Single Event Effect of a 16-Gbps Transmitter in Bulk Planar and Bulk FinFET CMOS Technologies

Yi Wen Jianjun Chen Bin Liang Yaqing Chi Hanhan Sun Jun Huang Hengzhu Liu

电子学报（英文）2026，Vol.35Issue(1)：57-65,9.

电子学报（英文）2026，Vol.35Issue(1)：57-65,9.DOI:10.23919/cje.2025.00.069

Single Event Effect of a 16-Gbps Transmitter in Bulk Planar and Bulk FinFET CMOS Technologies

Yi Wen ¹Jianjun Chen ¹Bin Liang ¹Yaqing Chi ¹Hanhan Sun ¹Jun Huang ¹Hengzhu Liu¹

作者信息

1. College of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,China
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摘要

关键词

Single event effect/Heavy ion experiment/Pulsed laser experiment/Bulk planar CMOS tech-nology/Bulk fin field-effect transistor CMOS technology

Key words

Single event effect/Heavy ion experiment/Pulsed laser experiment/Bulk planar CMOS tech-nology/Bulk fin field-effect transistor CMOS technology

引用本文复制引用

Yi Wen,Jianjun Chen,Bin Liang,Yaqing Chi,Hanhan Sun,Jun Huang,Hengzhu Liu..Single Event Effect of a 16-Gbps Transmitter in Bulk Planar and Bulk FinFET CMOS Technologies[J].电子学报（英文）,2026,35(1):57-65,9.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(Grant No.62174180). （Grant No.62174180）

电子学报（英文）

ISSN：1022-4653

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