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首页|期刊导航|电子学报(英文)|A Low-Noise 2.5 V 4-ppm/℃ Voltage Reference Used for a 16-Bit High-Precision DAC in 180 nm CMOS Process

A Low-Noise 2.5 V 4-ppm/℃ Voltage Reference Used for a 16-Bit High-Precision DAC in 180 nm CMOS Process

Peng Luo Bei Luo Maliang Liu Xiaopeng Wu Yintang Yang

电子学报(英文)2026,Vol.35Issue(1):74-79,6.
电子学报(英文)2026,Vol.35Issue(1):74-79,6.DOI:10.23919/cje.2025.00.056

A Low-Noise 2.5 V 4-ppm/℃ Voltage Reference Used for a 16-Bit High-Precision DAC in 180 nm CMOS Process

A Low-Noise 2.5 V 4-ppm/℃ Voltage Reference Used for a 16-Bit High-Precision DAC in 180 nm CMOS Process

Peng Luo 1Bei Luo 1Maliang Liu 1Xiaopeng Wu 1Yintang Yang1

作者信息

  • 1. School of Microelectronics,Xidian University,Xi'an 710071,China
  • 折叠

摘要

关键词

Bandgap/Voltage reference/Low noise/High-precision/Temperature coefficient/Complemen-tary metal-oxide-semiconductor/Digital-to-analog converter

Key words

Bandgap/Voltage reference/Low noise/High-precision/Temperature coefficient/Complemen-tary metal-oxide-semiconductor/Digital-to-analog converter

引用本文复制引用

Peng Luo,Bei Luo,Maliang Liu,Xiaopeng Wu,Yintang Yang..A Low-Noise 2.5 V 4-ppm/℃ Voltage Reference Used for a 16-Bit High-Precision DAC in 180 nm CMOS Process[J].电子学报(英文),2026,35(1):74-79,6.

基金项目

This work was supported by the Fundamental Re-search Funds for the Natural Science Foundation of China(Grant No.8091B02042301)and the Shaanxi Provincial Key Research and Development Program(Grant No.2024CY2GJHX34). (Grant No.8091B02042301)

电子学报(英文)

1022-4653

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