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1200 V 4H-SiC Trench Gate Lateral MOSFET with Carrier Movement Control Technology

Jie Ma Weifeng Sun Mengyao Zhao Tianchun Nie Yong Gu Qiwei Peng Runhua Huang Song Bai Long Zhang Siyang Liu

电子学报（英文）2026，Vol.35Issue(1)：114-119,6.

电子学报（英文）2026，Vol.35Issue(1)：114-119,6.DOI:10.23919/cje.2024.00.284

1200 V 4H-SiC Trench Gate Lateral MOSFET with Carrier Movement Control Technology

Jie Ma ¹Weifeng Sun ¹Mengyao Zhao ¹Tianchun Nie ¹Yong Gu ¹Qiwei Peng ¹Runhua Huang ²Song Bai ²Long Zhang ¹Siyang Liu¹

作者信息

1. National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
2. Nanjing Electronic Device Institute,Nanjing 100048,China
折叠

摘要

关键词

Silicon carbide/Lateral diffused metal-oxide-semiconductor field effect transistor/Carrier move-ment control/Electron mobility/Current path/Specific on-state resistance/Breakdown voltage

Key words

引用本文复制引用

Jie Ma,Weifeng Sun,Mengyao Zhao,Tianchun Nie,Yong Gu,Qiwei Peng,Runhua Huang,Song Bai,Long Zhang,Siyang Liu..1200 V 4H-SiC Trench Gate Lateral MOSFET with Carrier Movement Control Technology[J].电子学报（英文）,2026,35(1):114-119,6.

基金项目

This work was supported by the National Key R&D Program of China(Grant No.2023YFB4403700),the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20232006 and BK20241292),the Distinguished Young Scientists Foundation of Jiangsu Province(Grant No.BK20230025),the Key Research Program of Jiangsu Province(Grant No.BE2022058-3),and the China Postdoctoral Science Foundation(Grant Nos.2023TQ0055 and 2024M750419). （Grant No.2023YFB4403700）

电子学报（英文）

ISSN：1022-4653

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