电子科技2026，Vol.39Issue(4)：66-70,5.DOI:10.16180/j.cnki.issn1007-7820.2026.04.009
应变Si MOS器件单粒子辐照效应
Radiation Effects of Strained Si MOS Devices
摘要
Abstract
With the rapid development of aerospace industry,all kinds of radiation particles in the radiation en-vironment have become one of the key problems that restrict the reliability of electronic components in spacecraft.The single event effect of devices is becoming more and more serious.In view of the degradation of strained MOSFET(Metal Oxide Semiconductor Field Effect Transistor)devices caused by single particle effect in irradiation environ-ment,Sentaurus TCAD software is used to simulate the impact process of 50 nm strain silicon MOS device by heavy ions to verify the existence of funnel electric field and the influence of bipolar amplification effect on the drain transi-ent current,and to study the single particle irradiation characteristics of MOS device by stress,different injection po-sitions and different bias parameters.The results show that the peak value of the transient current increases with the increase of drain bias and LET(Linear Energy Transfer),and decreases with the increase of substrate doping concen-tration in the sensitive region of the device.关键词
应变Si/MOS器件/可靠性/辐照/单粒子效应/电势分布/瞬态电流/模拟Key words
strained Si/MOS device/reliability/radiation/single event effect/potential distribution/transient current/simulation分类
信息技术与安全科学引用本文复制引用
李嘉骏,郝敏如..应变Si MOS器件单粒子辐照效应[J].电子科技,2026,39(4):66-70,5.基金项目
国家自然科学基金(12105220) （12105220）
陕西省教育厅科研计划项目(21JK0849) （21JK0849）
西安石油大学研究生创新与实践项目(YCS23113090)National Natural Science Foundation of China(12105220) （YCS23113090）
General Special Scientific Research Programof Shaanxi Provincial Education Dep-artmen(21JK0849) （21JK0849）
Graduate Innovation and Practice Project of Xi'an Shiyou University(YCS23113090) （YCS23113090）
