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高亮度边发射半导体激光器及其脉冲驱动研究进展

高翔 BIMBERG Dieter 刘祥 薛晓娥 崔晓宁 郑思睿 SANA Fatima 汪丽杰 佟存柱 田思聪

发光学报2026,Vol.47Issue(4):582-601,20.
发光学报2026,Vol.47Issue(4):582-601,20.DOI:10.37188/CJL.20250272

高亮度边发射半导体激光器及其脉冲驱动研究进展

Advances in High-brightness Edge-emitting Semiconductor Lasers and Their Pulsed Driving

高翔 1BIMBERG Dieter 2刘祥 1薛晓娥 3崔晓宁 1郑思睿 1SANA Fatima 1汪丽杰 4佟存柱 4田思聪3

作者信息

  • 1. 中国科学院 长春光学精密机械与物理研究所,Bimberg中德绿色光子学研究中心 & 特种发光科学与技术全国重点实验室,吉林 长春 130033||中国科学院大学,北京 100049
  • 2. 中国科学院 长春光学精密机械与物理研究所,Bimberg中德绿色光子学研究中心 & 特种发光科学与技术全国重点实验室,吉林 长春 130033||柏林工业大学 固体物理研究所纳米光学中心,德国 柏林 D-10623
  • 3. 中国科学院 长春光学精密机械与物理研究所,Bimberg中德绿色光子学研究中心 & 特种发光科学与技术全国重点实验室,吉林 长春 130033
  • 4. 吉光半导体科技有限公司,吉林 长春 130031
  • 折叠

摘要

Abstract

High-brightness edge-emitting semiconductor lasers,with advantages such as high electro-optical con-version efficiency,high beam quality,and high peak power,have been widely applied in various fields,including material processing,medical treatment,and light detection and ranging(LiDAR).However,it remains challenging to achieve edge-emitting lasers with both high output power and high beam quality,and this challenge has become a research focus in the field of high-brightness edge-emitting semiconductor lasers.First,this paper systematically summarizes the research progress of high-power and high-beam-quality edge-emitting semiconductor lasers both do-mestically and internationally in recent years,outlines the methods for lateral mode control and vertical far-field di-vergence angle optimization of such lasers.Second,it presents the pulsed driving technology,which helps alleviate thermal accumulation in the active region,achieve high peak power output,and thereby enable high-brightness oper-ation of the device.The brightness of the multi-active-region tunnel junction lasers can reach 300 MW·cm-2·sr-1 at a peak power of 100 W.The High-brightness vertical broad-area edge-emitting(HiBBEE)laser can reduce the verti-cal far-field divergence angle,further improving the coupling efficiency of the optical system and lowering the cost of collimating and focusing lenses.Finally,combined with the current development status and future requirements of driving technologies and high-brightness lasers,this paper provides an outlook on the realization of high-performance pulsed-driven high-brightness semiconductor lasers.

关键词

半导体激光器/高功率/高光束质量/高亮度/脉冲驱动

Key words

semiconductor lasers/high-power/high beam quality/high-brightness/pulsed driving

分类

信息技术与安全科学

引用本文复制引用

高翔,BIMBERG Dieter,刘祥,薛晓娥,崔晓宁,郑思睿,SANA Fatima,汪丽杰,佟存柱,田思聪..高亮度边发射半导体激光器及其脉冲驱动研究进展[J].发光学报,2026,47(4):582-601,20.

基金项目

国家重点研发计划(2023YFE0111200) (2023YFE0111200)

国家自然科学基金(62061136010,61774156,62174159) (62061136010,61774156,62174159)

中国科学院青年创新促进会(Y2022067) (Y2022067)

中德科学中心合作交流项目(M0386) (M0386)

吉林省重大科技专项(20240201002GX)Supported by National Key R&D Program of China(2023YFE0111200) (20240201002GX)

National Natural Science Foundation of China(62061136010,61774156,62174159) (62061136010,61774156,62174159)

CAS Youth Innovation Promotion Association(Y2022067) (Y2022067)

Sino-German Center for Research Promotion(Joint Mobility Program of DFG and NSFC,M0386) (Joint Mobility Program of DFG and NSFC,M0386)

Science and Technology Development Plan Project of Jilin Province(20240201002GX) (20240201002GX)

发光学报

1000-7032

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