桂林电子科技大学学报2026，Vol.46Issue(2)：171-176,6.DOI:10.16725/j.1673-808X.2025133
退火处理对MIM结构Al2O3薄膜电容性能的影响
Effect of annealing treatment on the performance of MIM structure Al2O3 thin film capacitors
摘要
Abstract
Alumina is a high-k material that can be used in high-density MIM capacitors.It has a large bandgap and good thermal sta-bility,and can effectively reduce leakage current.Alumina film was prepared by electron beam evaporation,and 10 nm Al2O3 metal-insulator-metal(MIM)capacitors were prepared.The capacitance-voltage(C-V)and current-voltage(I-V)characteristic curves of the MIM capacitors without annealing,250℃,300℃,and 350℃nitrogen atmosphere annealing were tested.The experiment shows that 300℃annealing can achieve the best comprehensive performance of MIM capacitors,reduces the secondary nonlinear voltage characteristic parameters by 85%,and the leakage current by more than two orders of magnitude,thereby effectively improving the electrical performance of thin film capacitors.关键词
氧化铝/MIM电容/退火/电子束蒸发/漏电流Key words
alumina/MIM capacitor/annealing/electron beam evaporation/leakage current分类
信息技术与安全科学引用本文复制引用
万斌,李海鸥,曾理郡,刘兴鹏..退火处理对MIM结构Al2O3薄膜电容性能的影响[J].桂林电子科技大学学报,2026,46(2):171-176,6.基金项目
国家自然科学基金(62174041) （62174041）
桂林市重大专项计划(20220101) （20220101）
