华中科技大学学报（自然科学版）2026，Vol.54Issue(3)：1-7,7.DOI:10.13245/j.hust.240020
基于源极退化电阻的高电源抑制比带隙基准设计
Design of bandgap reference with high PSRR based on source degeneration resistor
李琪 1童乔凌 1喻研 1熊炫1
作者信息
- 1. 华中科技大学集成电路学院,湖北 武汉 430074
- 折叠
摘要
Abstract
In order to improve the power supply rejection ratio(PSRR)of bandgap reference(BGR)at low supply voltage,a novel bandgap reference structure was proposed.PSRR was improved by reducing mismatch and increasing the gain of operational amplifier.Conventional current-mode BGR introduce mismatch when using MOSFET to replicate current,resulting in a degradation of PSRR.To address this issue,resistor and MOSFET with source degradation resistor were used to replicate current.A high gain chopper amplifier was designed to reduce the offset voltage and noise.In addition,a two-stage curvature compensation structure was designed to reduce the temperature coefficient(TC).This bandgap reference was designed by TSMC 65 nm mixed signal CMOS technology.3 sigma Monte Carlo simulation was performed at a supply voltage of 1.2 V.Simulation results show that this BGR achieves a average PSRR of-81.4 dB at DC and-48.9 dB at 10 kHz.The TC of the BGR is 1.62× 10-6/℃ from-40 ℃ to 125 ℃.The integrated noise from 0.1 Hz to 10 Hz is 15.5 μV.关键词
带隙基准/高电源抑制比/低噪声/斩波技术/源极退化电阻Key words
bandgap reference/high PSRR/low noise/chopper technique/source degeneration resistor分类
信息技术与安全科学引用本文复制引用
李琪,童乔凌,喻研,熊炫..基于源极退化电阻的高电源抑制比带隙基准设计[J].华中科技大学学报（自然科学版）,2026,54(3):1-7,7.
