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基于MOSFET零温度系数工作点设计的电流基准

林玉滨 张心怡 童乔凌

华中科技大学学报(自然科学版)2026,Vol.54Issue(3):8-15,71,9.
华中科技大学学报(自然科学版)2026,Vol.54Issue(3):8-15,71,9.DOI:10.13245/j.hust.240837

基于MOSFET零温度系数工作点设计的电流基准

Current reference designed based on MOSFET zero temperature coefficient operating point

林玉滨 1张心怡 1童乔凌1

作者信息

  • 1. 华中科技大学集成电路学院,湖北 武汉 430074
  • 折叠

摘要

Abstract

This study aimed to address the problem of current reference being sensitive to process corners and requiring per-wafer calibration,which increases costs.A novel current reference circuit design based on the zero temperature coefficient(ZTC)operating point of MOSFETs was proposed.This design eliminates the impact of process corner variations on the reference current and integrates an automatic trimming circuit for process corner detection,avoiding external trimming calibration,thereby significantly enhancing the absolute accuracy of the reference current.The circuit was designed and verified in TSMC 65 nm complementary metal-oxide-semiconductor(CMOS)process,with a total area of 0.009 mm2,a total power consumption of 103 μW at a supply voltage of 1.2 V,and an absolute accuracy of the reference voltage as high as±0.3%,with the absolute accuracy of the output reference current improved to approximately±2.5%.The design offers significant advantages in reducing production costs and improving production efficiency,and is of great importance for the low-power and miniaturization circuit demands of emerging applications such as the Internet of things and wearable devices.

关键词

电流基准/自动修调/工艺角检测/零温度系数(ZTC)/阈值电压补偿

Key words

current reference/automatic trimming/process corner detection/zero temperature coefficient(ZTC)/threshold voltage compensation

分类

信息技术与安全科学

引用本文复制引用

林玉滨,张心怡,童乔凌..基于MOSFET零温度系数工作点设计的电流基准[J].华中科技大学学报(自然科学版),2026,54(3):8-15,71,9.

华中科技大学学报(自然科学版)

1671-4512

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