Bi掺杂InSe晶体生长及性能研究
Crystal Growth and Properties of Bi-doped InSe
摘要
Abstract
Indium selenide(InSe),a typical layered Ⅲ-Ⅵ semiconductor,has attracted intense interest owing to its high electron mobility,tunable bandgap and exceptional plastic deformation capability,enabling it a promising candidate for next-generation electronic,optoelectronic and flexible devices.Recently,the controlled growth of intrinsic InSe crystals has been well developed,whereas doping InSe crystals with a third element remains relatively scarce.In this study,intrinsic InSe crystals were grown using the Bridgman method,and high-quality Bi-doped InSe crystals were then prepared through introducing Bi during the crystal synthesis stage.Optical microscopy and scanning electron microscopy observations indicate that the as-grown Bi-doped InSe crystals exhibit a smooth surface and excellent single-crystalline characteristic.Raman spectroscopy and X-ray diffraction analyses further demonstrate that,after Bi doping,their phase structure is consistent with former intrinsic crystals,exhibiting ε-InSe phase.Chemical etching experiments reveal that the doped Bi atoms can interact with dislocation cores within the crystal,effectively suppressing their motion and significantly reducing their dislocation density.Electrical measurements show that the Bi doping markedly increases carrier concentration and mobility of InSe crystal at high temperature,which is primarily attributed to the introduction of additional free carriers and suppression of carrier scattering resulting from the reduced dislocation density.Consequently,Bi-doped InSe crystal was successfully fabricated,and its superior performance compared to the intrinsic InSe was verified.This work provides theoretical insights and experimental guidance for optimizing properties of InSe crystals in application in future devices.关键词
InSe晶体/Bi元素掺杂/布里奇曼法/位错Key words
InSe crystal/Bi elemental doping/Bridgman method/dislocation分类
化学化工引用本文复制引用
徐浩,顾海涛,吴鸿辉,岳晓飞,林思琪,金敏..Bi掺杂InSe晶体生长及性能研究[J].无机材料学报,2026,41(4):493-499,7.基金项目
中国载人航天工程空间应用系统项目(KJZ-YY-NCL405) （KJZ-YY-NCL405）
国家自然科学基金(52371193,52272006) （52371193,52272006）
上海市晨光计划(22CG281) （22CG281）
上海市优秀学术带头人(23XD1421200) （23XD1421200）
上海启明星计划(23QA1403900) （23QA1403900）
上海市东方学者计划(TP2022122) （TP2022122）
上海市东方英才项目(QNWS2023) （QNWS2023）
浙江省自然科学基金(LD25E020001) Space Application System of China Manned Space Program(KJZ-YY-NCL405) （LD25E020001）
National Natural Science Foundation of China(52371193,52272006) （52371193,52272006）
Chenguang Program(22CG281) （22CG281）
Shanghai Academic Research Leader(23XD1421200) （23XD1421200）
Shanghai Rising-Star Program(23QA1403900) （23QA1403900）
Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions(TP2022122) （Eastern Scholar）
Shanghai Oriental Talented Youth Project(QNWS2023) （QNWS2023）
Zhejiang Provincial Natural Science Foundation of China(LD25E020001) （LD25E020001）
