中国机械工程2026，Vol.37Issue(4)：959-966,998,9.DOI:10.3969/j.issn.1004-132X.2026.04.020
一种新型的SiC金属氧化物半导体场效应管的寿命预测
A Novel SiC MOSFET Lifetime Prediction
摘要
Abstract
To address the reliability challenges faced by SiC MOSFETs in high-frequency,high-temperature,and high-power density applications,a novel lifetime prediction method was proposed that in-tegrated a CNN,an ECA mechanism,and a BiLSTM.This method used the drain-source on-state volt-age drop as the core degradation feature,incorporated preprocessing strategies such as outlier removal,nor-malization,and exponential smoothing,and reconstructed the degradation time series through a sliding win-dow to achieve effective modeling under small sample conditions.Comparative experimental results demon-strate that the proposed method offers significant advantages in prediction accuracy,stability,and robustness.关键词
碳化硅金属氧化物半导体场效应管/寿命预测/卷积神经网络/双向长短期记忆网络/高效通道注意力/功率循环Key words
SiC metal-oxide-semiconductor field-effect transistors(MOSFET)/lifetime prediction/convolutional neural network(CNN)/bidirectional long short-term memory(BiLSTM)/efficient channel attention(ECA)/power cycling分类
机械制造引用本文复制引用
胡娅维,方响,尹传安,林子俊,林小卫..一种新型的SiC金属氧化物半导体场效应管的寿命预测[J].中国机械工程,2026,37(4):959-966,998,9.基金项目
国家自然科学基金(52377035) （52377035）
安徽省先进电力电子与电能变换工程研究中心开放课题(APE202504) （APE202504）
