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国家科学评论(英文版)2026,Vol.13Issue(6):204-210,7.DOI:10.1093/nsr/nwag051
Giant enhancement of optoelectronic properties in compressed boron-rich semiconductors
Giant enhancement of optoelectronic properties in compressed boron-rich semiconductors
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borides/optoelectronic/high pressure/anti-WilsonKey words
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Ming-Xing Huang,Xiao-Ji Weng,Feng Ke,Xiang-Feng Zhou,Yongjun Tian,Kun Ye,Jingyu Hou,Yufei Gao,Guochun Yang,Lin Wang,Wentao Hu,Bo Xu,Zhongyuan Liu..Giant enhancement of optoelectronic properties in compressed boron-rich semiconductors[J].国家科学评论(英文版),2026,13(6):204-210,7.基金项目
This work was supported by the National Natural Sci-ence Foundation of China(52025026,52288102,52090020,52372157,52571229,52202155 and 52403391).Part of the work was supported by the Hebei Natural Science Foundation(E2025203149 and A2025203019). (52025026,52288102,52090020,52372157,52571229,52202155 and 52403391)