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Back-end-of-line-compatible low-voltage operation in Hf0.5Zr0.5O2 ferroelectric film enabled by in-situ lanthanum doping

Yinchi Liu Kangli Xu Shuqi Tang Handong Zhu Lin Chen Shiyou Chen Wenjun Liu Peng Zhou

国家科学评论（英文版）2026，Vol.13Issue(6)：256-264,9.
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国家科学评论（英文版）2026，Vol.13Issue(6)：256-264,9.DOI:10.1093/nsr/nwag049

Back-end-of-line-compatible low-voltage operation in Hf0.5Zr0.5O2 ferroelectric film enabled by in-situ lanthanum doping

Back-end-of-line-compatible low-voltage operation in Hf0.5Zr0.5O2 ferroelectric film enabled by in-situ lanthanum doping

Yinchi Liu 1Kangli Xu 2Shuqi Tang 2Handong Zhu 2Lin Chen 2Shiyou Chen 2Wenjun Liu 1Peng Zhou1

作者信息

  • 1. College of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,China||Shaoxin Laboratory,Shaoxing 312000,China
  • 2. College of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,China
  • 折叠

摘要

关键词

lanthanum doping/ferroelectricity/back-end-of-line/low-voltage operation

Key words

lanthanum doping/ferroelectricity/back-end-of-line/low-voltage operation

引用本文复制引用

Yinchi Liu,Kangli Xu,Shuqi Tang,Handong Zhu,Lin Chen,Shiyou Chen,Wenjun Liu,Peng Zhou..Back-end-of-line-compatible low-voltage operation in Hf0.5Zr0.5O2 ferroelectric film enabled by in-situ lanthanum doping[J].国家科学评论（英文版）,2026,13(6):256-264,9.

基金项目

This work was supported by the Shanghai Municipal Science and Technology Commission(24DP1500105 and 23511102300)and the National Key Research and Development Program of China(2021YFB3202500 and 2021YFA1202600). （24DP1500105 and 23511102300）

国家科学评论（英文版）

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