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Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model

Zeping Li Ran An Mingyan Yang Dongjing Li Hao Wu

化学物理材料（英文）2026，Vol.5Issue(2)：170-174,5.

化学物理材料（英文）2026，Vol.5Issue(2)：170-174,5.DOI:10.1016/j.chphma.2026.01.003

Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model

Zeping Li ¹Ran An ¹Mingyan Yang ²Dongjing Li ¹Hao Wu¹

作者信息

1. School of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,China
2. Department of Rehabilitation,Xianning Hospital of Traditional Chinese Medicine,Xianning 437100,China
折叠

摘要

关键词

Plasma etching/AAO/PIC/MCC/Charge density/Particle trajectory/Nanostructured silicon

Key words

Plasma etching/AAO/PIC/MCC/Charge density/Particle trajectory/Nanostructured silicon

引用本文复制引用

Zeping Li,Ran An,Mingyan Yang,Dongjing Li,Hao Wu..Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model[J].化学物理材料（英文）,2026,5(2):170-174,5.

基金项目

The authors acknowledge the support from National Natural Sci-ence Foundation of China(12505231)and National Scientific Research Project Cultivation Program of Hubei University of Science and Tech-nology(2023-25GP01). （12505231）

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