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Corundum(InxGa1-x)2O3 alloys:First-principles study,epitaxial growth and thermal annealing

Do Dang Minh Nguyen Le Manh An Kyoung-Ho Kim Si-Young Bae Minh-Tan Ha

化学物理材料（英文）2026，Vol.5Issue(2)：232-242,11.

化学物理材料（英文）2026，Vol.5Issue(2)：232-242,11.DOI:10.1016/j.chphma.2025.11.001

Corundum(InxGa1-x)2O3 alloys:First-principles study,epitaxial growth and thermal annealing

Do Dang Minh ¹Nguyen Le Manh An ¹Kyoung-Ho Kim ²Si-Young Bae ³Minh-Tan Ha¹

作者信息

1. School of Materials Science and Engineering,Hanoi University of Science and Technology,Ha Noi 10000,Vietnam
2. System Technology Research Division,Korea Research Institute for Defense Technology,Jinju 52852,Republic of Korea
3. Department of Semiconductor Engineering,Pukyong National University,Busan 49315,Republic of Korea
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摘要

关键词

(InxGa1-x)2O3 alloys/First-principles calculations/Mist-CVD/Miscibility gap/Bandgap engineering

Key words

(InxGa1-x)2O3 alloys/First-principles calculations/Mist-CVD/Miscibility gap/Bandgap engineering

引用本文复制引用

Do Dang Minh,Nguyen Le Manh An,Kyoung-Ho Kim,Si-Young Bae,Minh-Tan Ha..Corundum(InxGa1-x)2O3 alloys:First-principles study,epitaxial growth and thermal annealing[J].化学物理材料（英文）,2026,5(2):232-242,11.

基金项目

This research was funded by the Ministry of Education and Training(MOET)of Vietnam under grant number B2024-BKA-22 and the Na-tional Research Foundation of Korea(NRF)and the Commercialization Promotion Agency for R&D Outcomes(COMPA)grant funded by the Korea Government(Ministry of Science and ICT)(RS-2025-02222547). （MOET）

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