南通职业大学学报2026，Vol.40Issue(1)：53-59,7.DOI:10.3969/j.issn.1008-5327.2026.01.010
基于红外干涉法的SiC外延层厚度测量反演建模
Inverse Modeling of SiC Epitaxial Layer Thickness Measurement Using Infrared Reflectometry
沈思妤1
作者信息
- 1. 南通大学 数学与统计学院,江苏 南通 226019
- 折叠
摘要
Abstract
In addition to the mixing of dual-beam and multi-beam interferences,the material dispersion effects are found in infrared interferometric measurement of SiC epitaxial layer thickness.An infrared interferometric measurement model combining physical mechanisms and data-driven optimization is proposed to construct an inversion optimization framework with the minimization of reflection spectrum residuals by establishing a forward interference model based on Cauchy dispersion.For dual-beam interference,the differential evolution(DE)algorithm is used to achieve high-precision inversion with the average thickness of 6.48 μm(10° incidence)and 5.47 μm(15° incidence),and a relative error of less than 5.17%.For multi-beam interference,a reflection threshold(R＞0.5)is derived and used as a criterion,obtaining the reduced root mean square error(RMSE)of 0.175.The results show that the proposed model helps achieve high inversion accuracy and robustness.关键词
红外干涉测量/SiC/外延层厚度/Cauchy色散模型/差分进化(DE)算法/参数反演Key words
infrared interferometric measurement/SiC/epitaxial thickness/Cauchy dispersion model/differential evolution(DE)algorithm/parameter inversion分类
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沈思妤..基于红外干涉法的SiC外延层厚度测量反演建模[J].南通职业大学学报,2026,40(1):53-59,7.
