西北师范大学学报（自然科学版）2026，Vol.62Issue(3)：1-14,23,15.DOI:10.16783/j.cnki.nwnuz.2026.03.0001
Cu2ZnSn(S,Se)4光电突触忆阻器及其神经形态应用研究简述
A mini-review of Cu2ZnSn(S,Se)4 optoelectronic synaptic memristors and neuromorphic applications
摘要
Abstract
Memristors,as key fundamental devices for constructing next-generation"in-memory computing"and brain-inspired neuromorphic computing,are regarded as important candidates for breaking through the bottlenecks of the"von Neumann architecture",due to their advantages in high-density storage,tunable conductivity,and potential energy efficiency.The Cu2ZnSn(S,Se)4(CZTSSe)resistive material has excellent photoelectric response,abundant elemental reserves,low cost and is environmentally friendly,it has become the preferred material for photoelectric synaptic memristor.This article briefly reviews the research progress in optimizing the resistive performance,simulating the synaptic behavior,and the neuromorphic applications of the CZTSSe photoelectronic synaptic memristor via component ratio,electrode matching,and thickness regulation,which will provied an important reference for the design,optimization and application of high-performance CZTSSe-based neuromorphic devices.关键词
CZTSSe/忆阻器/光电突触/神经形态计算Key words
CZTSSe/memristor/optoelectronic synapse/neuromorphic computing分类
数理科学引用本文复制引用
杨凤霞,董小飞,陈建彪,赵雲,陈江涛,张旭强,李燕..Cu2ZnSn(S,Se)4光电突触忆阻器及其神经形态应用研究简述[J].西北师范大学学报（自然科学版）,2026,62(3):1-14,23,15.基金项目
国家自然科学基金资助项目(102364027,12164041) （102364027,12164041）
甘肃省产业支撑计划资助项目(2025CYZC-009) （2025CYZC-009）
西北师范大学重大科研项目培育计划(LKZD2022-05) （LKZD2022-05）
