首页|期刊导航|半导体学报（英文版）|A novel split gate and contact-field-plate LDMOS with enhanced BV-Ron,sp trade-off and improved FOM

A novel split gate and contact-field-plate LDMOS with enhanced BV-Ron,sp trade-off and improved FOM

Yiting Ye Xiaoyun Huang Yixian Song Kai Xu

半导体学报（英文版）2026，Vol.47Issue(5)：36-42,7.

半导体学报（英文版）2026，Vol.47Issue(5)：36-42,7.DOI:10.1088/1674-4926/25080033

A novel split gate and contact-field-plate LDMOS with enhanced BV-Ron,sp trade-off and improved FOM

Yiting Ye ¹Xiaoyun Huang ¹Yixian Song ¹Kai Xu²

作者信息

1. College of Integrated Circuits,Zhejiang University,Hangzhou 311200,China
2. College of Integrated Circuits,Zhejiang University,Hangzhou 311200,China||ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China||Zhejiang Technology Innovation Center of CMOS IC Manufacturing Process and Design,Hangzhou 311200,China
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摘要

关键词

lateral diffused metal-oxide-semiconductor(LDMOS)/specific on-resistance(Ron,sp)/breakdown voltage(BV)/split gate/contact field plate(CFP)

Key words

lateral diffused metal-oxide-semiconductor(LDMOS)/specific on-resistance(Ron,sp)/breakdown voltage(BV)/split gate/contact field plate(CFP)

引用本文复制引用

Yiting Ye,Xiaoyun Huang,Yixian Song,Kai Xu..A novel split gate and contact-field-plate LDMOS with enhanced BV-Ron,sp trade-off and improved FOM[J].半导体学报（英文版）,2026,47(5):36-42,7.

基金项目

This work was supported by the Zhejiang Province Key Research and Development Programs under Grant 2024C01002. （）

半导体学报（英文版）

ISSN：1674-4926

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