东北电力技术2026，Vol.47Issue(5)：18-21,27,5.
SiC MOSFET固态断路器关键技术研究
Research on Key Technologies of SiC MOSFET SSCB
郝震1
作者信息
- 1. 国网辽宁省电力有限公司阜新供电公司,辽宁 阜新 125100
- 折叠
摘要
Abstract
With the development of smart distribution grids,circuit breakers provide strong protection for the safety of distribution grids.It focuses on the key technologies of solid-state circuit breaker(SSCB)based on SiC MOSFETs.By integrating wide bandgap semiconductor materials and intelligent optimization algorithms,it enhances the performance of SSCBs,which can solve the problems of slow response speed,short service life and arc presence of traditional mechanical circuit breakers.It constructs a test platform to verify the prototype.The results show that the prototype can achieve rapid circuit breaking,with an identification accuracy error of no more than 0.5 ms,a working life exceeding one million times,and all core parameters meet the requirements of industry standards.关键词
SiC MOSFET/固态断路器/器件封装/快速保护/智能优化算法Key words
SiC MOSFET/SSCB/device packaging/quick protection/intelligent optimization algorithm分类
信息技术与安全科学引用本文复制引用
郝震..SiC MOSFET固态断路器关键技术研究[J].东北电力技术,2026,47(5):18-21,27,5.
