高电压技术2026，Vol.52Issue(4)：1540-1550,11.DOI:10.13336/j.1003-6520.hve.20260038
自主可控的功率半导体器件仿真工具研发进展(二):三维计算的精度
Progress of Power Semiconductor Device Simulation Tool Development Part Ⅱ:Accuracy of Three-dimensional Calculations
摘要
Abstract
Power semiconductor devices are the core components of power electronic equipment.China is highly de-pendent on imports for simulation softwares of semiconductor devices TCAD(technology computer aided design).Based on the technical accumulation of 2D simulation tool development since 2019,we has independently developed a 3D sim-ulation tool for power semiconductor devices.This paper analyzes the main challenges of 3D simulations for power semiconductor devices compared with 2D simulations,including the increase in the number of degrees of freedom,the complexity in extending control volume construction and the difficulty in accurately computing the geometric coefficients.Meanwhile,the key points are elaborated,including the construction of polyhedral control volumes,the 3D extension of the Scharfetter-Gummel scheme based on the finite volume method,and highly accurate geometric coefficient calcula-tions.Systematic comparisons of simulation results are conducted with the commercial software Synopsys TCAD Sentaurus Device under the conditions of various device types,operating conditions,and circuit topologies.The simula-tion results of the developed 3D tool,including the steady-state microscopic physical quantities and transient switching characteristics,are in high agreement with those of the commercial software,which verifies the accuracy of the inde-pendently developed 3D simulation tool.关键词
功率半导体器件/仿真工具/三维/漂移扩散模型/国产替代Key words
power semiconductorr device/simulation tool/three dimensions/drift-diffusion model/research progress引用本文复制引用
庄池杰,余占清,吴锦鹏,魏晓光,曾嵘,林波,石清元,刘志成,李立,吴丹,彭晞雨,施连军,纪瑞朗..自主可控的功率半导体器件仿真工具研发进展(二):三维计算的精度[J].高电压技术,2026,52(4):1540-1550,11.基金项目
智能电网重大专项(2030)(2025ZD0803800).Project supported by Smart-grid National Science and Technology Major Project(2025ZD0803800). （2030）
